Title :
CRMGT: a MOS-gated power switch
Author :
Sridhar, S. ; Baliga, B.J.
fDate :
8/29/1996 12:00:00 AM
Abstract :
A new MOS-gated thyristor structure with low on-state voltage drop, known as a channel regulated MOS-gated thyristor (CRMGT) is reported for the first time. The CRMGT uses a thin silicon layer, formed above a buried oxide layer, to control current flow through a four layer thyristor structure. It is demonstrated via simulations that the CRMGT has excellent high voltage current saturation with an FBSOA superior to that of the IGBT
Keywords :
MOS-controlled thyristors; power semiconductor switches; FBSOA; MOS-gated power switch; Si; buried oxide layer; channel regulated MOS-gated thyristor; current flow; forward biased safe operating area; four layer thyristor structure; high voltage current saturation; on-state voltage drop; thyristor structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961153
