Double-sided pattern design on patterned sapphire substrate of GaN-based LEDs

Author

Xinyu Yu ; Zhen Che ; Jun Zhang ; Mengyuan Xie ; Jianhui Yu ; Huihui Lu ; Yunhan Luo ; Zhe Chen

Author_Institution

Dept. of Optoelectron. Eng., Jinan Univ., Guangzhou, China

fYear

2014

fDate

1-4 Sept. 2014

Firstpage

25

Lastpage

26

Abstract

In this paper, we established a optical model and made an analysis of GaN-based LED flip chip by double-sided PSS (patterned sapphire substrate). The result analysis shows that the small distance and large radius of micro-cylinder and micro-hemisphere for cylindrical and hemispherical PSS would be more effective to enhance LED efficacy. The hemispherical pattern is more efficient than the cylindrical for enhancement for the light extraction efficiency (LEE) of PSS-LED flip chip. The light extraction efficiency of micro-hemispherical PSS-LED chip is twice than that on the non-patterned (or normal planar) sapphire substrate (non-PSS).

Keywords

III-V semiconductors; flip-chip devices; gallium compounds; light emitting diodes; wide band gap semiconductors; Al₂O₃; GaN; GaN-based LED flip chip; cylindrical PSS; double-sided PSS; double-sided pattern design; hemispherical pattern; light extraction efficiency; microcylinder; microhemisphere; microhemispherical PSS-LED chip; optical model; patterned sapphire substrate; Flip-chip devices; Light emitting diodes; Optical device fabrication; Optical reflection; Optical refraction; Optical variables control; Substrates; double-sided pattern; light extraction efficiency; patterned sapphire substrate;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on

Conference_Location

Palma de Mallorca

ISSN

2158-3234

Print_ISBN

978-1-4799-3681-6

Type

conf

DOI

10.1109/NUSOD.2014.6935338

Filename

6935338