Electrical characteristics simulation of GaAs-based blocked-impurity-band detector for THz application

Author

Xiaodong Wang ; Bingbing Wang ; Liwei Hou ; Wei Xie ; Xiaoyao Chen ; Ming Pan

Author_Institution

No. 50 Res. Inst., China Electron. Technol. Group Corp., Shanghai, China

fYear

2014

fDate

1-4 Sept. 2014

Firstpage

29

Lastpage

30

Abstract

Electrical characteristics of GaAs-based blocked-impurity-band (BIB) detector are numerically studied. Electron density and electric field distributions of the device are presented with consideration of immaturity of GaAs blocking layer. Temperature-dependent dark current characteristics are then simulated by taking into account impurity-band effects.

Keywords

III-V semiconductors; dark conductivity; electron density; gallium arsenide; impurities; microwave photonics; terahertz wave detectors; GaAs; GaAs blocking layer; THz application; blocked impurity band detector; electric field distributions; electrical characteristics simulation; electron density; impurity-band effects; temperature-dependent dark current characteristics; Dark current; Detectors; Gallium arsenide; Impurities; Mathematical model; Numerical models;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on

Conference_Location

Palma de Mallorca

ISSN

2158-3234

Print_ISBN

978-1-4799-3681-6

Type

conf

DOI

10.1109/NUSOD.2014.6935340

Filename

6935340