DocumentCode :
1332266
Title :
Statistical Compact Model Extraction: A Neural Network Approach
Author :
Viraraghavan, Janakiraman ; Pandharpure, Shrinivas J. ; Watts, Josef
Author_Institution :
Semicond. R&D Center, IBM India Pvt. Ltd., Bangalore, India
Volume :
31
Issue :
12
fYear :
2012
Firstpage :
1920
Lastpage :
1924
Abstract :
A technique for extracting statistical compact model parameters using artificial neural networks (ANNs) is proposed. ANNs can model a much higher degree of nonlinearity compared to existing quadratic polynomial models and, hence, can even be used in sub-100-nm technologies to model leakage current that exponentially depends on process parameters. Existing techniques cannot be extended to handle such exponential functions. Additionally, ANNs can handle multiple input multiple output relations very effectively. The concept applied to CMOS devices improves the efficiency and accuracy of model extraction. Results from the ANN match the ones obtained from SPICE simulators within 1%.
Keywords :
CMOS integrated circuits; integrated circuit modelling; leakage currents; neural nets; polynomial approximation; CMOS devices; SPICE simulators; artificial neural networks; exponential functions; leakage current; multiple input multiple output relations; quadratic polynomial models; statistical compact model extraction; statistical compact model parameters; Artificial neural networks; Backpropagation; Modeling; Statistical analysis; Backward propagation of variance (BPV); compact model; extraction; neural; statistical;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/TCAD.2012.2207955
Filename :
6349439
Link To Document :
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