A self-consistent algorithm for InGaAs/GaAs strained multi-period Quantum Well Infrared Photodetectors

Author

Lu, X.Q. ; Xiong, D.Y. ; Yu, C.L. ; Wang, J.Q.

Author_Institution

Key Lab. of Polar Mater. & Devices, East China Normal Univ., Shanghai, China

fYear

2014

fDate

1-4 Sept. 2014

Firstpage

51

Lastpage

52

Abstract

This work presents a self-consistent algorithm for the simulation of responsivity and detectivity of InGaAs/GaAs strained multi-period Quantum Well Infrared Photodetectors. This algorithm takes into account the fundamental mechanisms involved in the InGaAs/GaAs detector detection process. We have calculated a practical InGaAs/GaAs detector by using this algorithm. The obtained results were in good agreement with the experiments at low temperature below 3.5 V.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; nanophotonics; photodetectors; quantum well devices; semiconductor quantum wells; InGaAs-GaAs; detectivity; responsivity; self-consistent algorithm; strained multi-period quantum well infrared photodetectors; Dark current; Detectors; Gallium arsenide; Indium gallium arsenide; Lighting; Photodetectors; Quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on

Conference_Location

Palma de Mallorca

ISSN

2158-3234

Print_ISBN

978-1-4799-3681-6

Type

conf

DOI

10.1109/NUSOD.2014.6935351

Filename

6935351