Title :
Operating parameter based wirebond model for a power module
Author :
Gopi Reddy, Lakshmi ; Tolbert, Leon M. ; Ozpineci, Burak
Author_Institution :
EECS Dept., Univ. of Tennessee, Knoxville, TN, USA
Abstract :
Lifetime estimation of power semiconductors for various applications has gained technical importance. The main failures in high power semiconductors are caused by thermo-mechanical fatigue, mainly in solder and wirebonds, due to different coefficients of thermal expansions of the various packaging materials. Most of the lifetime models do not take all the operating parameters into account. There is a need to develop a generalized lifetime model specific to failure mechanisms that account for all of the operating parameters in an application. This paper presents finite element based stress simulations for varying operating parameters (current, temperature, etc.) for a fixed dimension wire.
Keywords :
power semiconductor devices; semiconductor device reliability; failure mechanism; finite element based stress simulation; generalized lifetime model; operating parameter based wirebond model; power module; power semiconductors; solder; thermo-mechanical fatigue; wirebonds; Copper; Current density; Finite element analysis; Insulated gate bipolar transistors; Silicon; Stress; Wires;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE
Conference_Location :
Fort Worth, TX
DOI :
10.1109/APEC.2014.6803813