Title :
High temperature characteristics of Pd Schottky contacts on n-type GaN
Author :
Schmitz, A.C. ; Ping, A.T. ; Khan, M.Asif ; Chen, Q. ; Yang, J.W. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
9/12/1996 12:00:00 AM
Abstract :
High temperature current-voltage characteristics of Pd Schottky contacts on n-type GaN have been investigated up to 500°C. The effects of high temperature annealing on barrier height and the ideality factor of the Schottky contacts were investigated. From the trend of barrier height and ideality, Pd metal is suitable as the gate metal of GaN-based FETs for temperatures below 300°C
Keywords :
III-V semiconductors; Schottky barriers; annealing; gallium compounds; palladium; semiconductor-metal boundaries; 300 to 500 C; FET gate metal; Pd Schottky contact; Pd-GaN; barrier height; current-voltage characteristics; high temperature annealing; ideality factor; n-type GaN;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961191
