Title :
Schottky-barrier infrared focal plane arrays with novel readout structures
Author :
Mcnutt, Michael J. ; Maattson, R.B. ; Vu, Anh N.
Author_Institution :
Ford Aerosp. Corp., Newport Beach, CA, USA
fDate :
4/1/1990 12:00:00 AM
Abstract :
A description is given of 128×128 and 256×256 pixel Schottky-barrier infrared focal-plane arrays that incorporate meander channel CCD readout structures for the IR-induced image charge. These innovations reduce the nonimaging area in each pixel and increase the fill factor. A design figure of merit that allows direct comparisons of design efficiency while normalizing pixel area, design rules, and number of process layers is proposed. Test results show excellent performance for the two arrays with both medium-wavelength (⩽6 μm) PtSi diodes operating at 83 K and long-wavelength (⩽11 μm) IrSi diodes operating at 50 K
Keywords :
CCD image sensors; Schottky-barrier diodes; infrared imaging; 11 micron; 128 pixel; 16384 pixel; 256 pixel; 50 K; 6 micron; 65536 pixel; 83 K; FPA; IR-induced image charge; IrSi diodes; PtSi diodes; Schottky-barrier; image sensor; infrared focal plane arrays; long-wavelength; meander channel CCD; medium-wavelength; parallel readout; readout structures; Charge coupled devices; Hot carriers; Infrared detectors; Infrared imaging; Optical imaging; Photonic band gap; Schottky diodes; Silicides; Silicon; Substrates;
Journal_Title :
Solid-State Circuits, IEEE Journal of
