DocumentCode
1335845
Title
Shifting boundaries
Author
Davies, D.
Author_Institution
IET, Stevenage, UK
Volume
48
Issue
23
fYear
2012
Firstpage
1439
Lastpage
1439
Abstract
US researchers report new RF power limiters based on III-Nitride materials that have unprecedented high operating voltages, excellent temperature stability and radiation hardness. Fully planar and simple to fabricate, these limiters could be used in nearly any type of microwave integrated circuit.
Keywords
microwave integrated circuits; microwave limiters; radiation hardening (electronics); III-nitride materials; RF power limiters; US researchers; microwave integrated circuit; radiation hardness; temperature stability;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2012.3759
Filename
6354215
Link To Document