• DocumentCode
    1336013
  • Title

    Accumulation and depletion in InAs epilayers

  • Author

    Wieder, H.H.

  • Volume
    36
  • Issue
    7
  • fYear
    2000
  • fDate
    3/30/2000 12:00:00 AM
  • Firstpage
    672
  • Lastpage
    673
  • Abstract
    Thin heteroepitaxial layers of In0.8Al0.2As grown on InAs surfaces by molecular beam epitaxy can reduce the density of surface states which pin the Fermi level and cause surface accumulation. Biased capacitance-voltage and gated Hall measurements indicate that InAs surfaces can be driven through the flat-band into depletion with the density of surface states reduced to ~1.5×10 12 cm-2 eV-1 below the Fermi level
  • Keywords
    Fermi level; III-V semiconductors; accumulation layers; indium compounds; semiconductor epitaxial layers; surface states; Fermi level; In0.8Al0.2As-InAs; InAs; InAs epilayers; InAs surfaces; MBE; biased capacitance-voltage measurements; depletion; gated Hall measurements; molecular beam epitaxy; surface accumulation; surface states density reduction; thin heteroepitaxial layers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000519
  • Filename
    842233
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1336013