Title :
Pre-breakdown in thin SiO2 films
Author :
Crupi, F. ; Neri, B. ; Lombardo, S.
Author_Institution :
Pisa Univ., Italy
fDate :
6/1/2000 12:00:00 AM
Abstract :
The on-off fluctuations of the tunnel current in 5.6 nm SiO/sub 2/ films before dielectric breakdown are analyzed in detail. For this purpose, a low noise measurement system has been realized which allows detection of pre-breakdown phenomena and interruption of the stress before catastrophic failure occurs. A spectral analysis of these fluctuations is presented along with preliminary results of the experiments made possible, for the first time, by the new measurement system.
Keywords :
MOS capacitors; current fluctuations; electric breakdown; insulating thin films; random noise; semiconductor device breakdown; semiconductor device noise; silicon compounds; spectral analysis; 5.6 nm; MOS capacitors; Si-SiO/sub 2/; catastrophic failure; dielectric breakdown; low noise measurement system; on-off fluctuations; pre-breakdown phenomena; random telegraph signals; spectral analysis; stress interruption; thin SiO/sub 2/ films; tunnel current; Breakdown voltage; Degradation; Dielectric breakdown; Dielectric thin films; Electric breakdown; Fluctuations; MOS capacitors; Noise measurement; Silicon; Stress control;
Journal_Title :
Electron Device Letters, IEEE
