Title :
Origin of Radiation Induced Damage in Organic P3HT:PCBM Based Photocells
Author :
Devine, Roderick A B ; Mayberry, Clay ; Kumar, Ankit ; Yang, Yang
Author_Institution :
Electron. Foundations Group, AFRL/RVSE, Kirtland AFB, NM, USA
Abstract :
Organic semiconductor photocells based upon P3HT:PCBM (1:1 by weight) have been subjected to X irradiation. The carrier lifetime has been determined using a pulsed optical method with continuous light to generate an open circuit voltage bias. No effect is observed on the carrier lifetime up to 300 krad (SiO2). However, changes in the open circuit voltage are observed and we argue that these result from compensation of the internal field which results from the built-in potential. The origin of the field modifications must lay in the presence of radiation induced trapped charge near the organic semiconductor/anode and/or cathode interfaces.
Keywords :
anodes; carrier lifetime; cathodes; photoelectric cells; radiation effects; SiO2; X irradiation; built-in potential; carrier lifetime; cathode interface; circuit voltage bias; organic semiconductor photocells; organic semiconductor-anode interface; pulsed optical method; trapped charge; Charge carrier lifetime; Organic semiconductors; Photovoltaic cells; Polymers; Radiation effects; Carrier lifetime; organic semiconductors; photovoltaic cells;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2068577
