Modeling the Dose Rate Response and the Effects of Hydrogen in Bipolar Technologies

Author

Chen, X. Jie ; Barnaby, Hugh J. ; Adell, Philippe ; Pease, Ronald L. ; Vermeire, Bert ; Holbert, Keith E.

Author_Institution

Radiat. Monitoring Devices, Watertown, MA, USA

Volume

56

Issue

6

fYear

2009

Firstpage

3196

Lastpage

3202

Abstract

A physical model describing the dose rate response and the effect of hydrogen in bipolar technologies is presented. The model uses electron-hole pair recombination and competing hydrogen reactions to explain the behaviors of bipolar devices and circuits at different dose rates. Dose-rate-dependent computer simulations based on the model were performed, and the results provide excellent qualitative agreement with the dose rate data taken on both gated lateral pnp bipolar test transistors and LM193 bipolar dual-voltage comparators. The model presented in this paper can be used to explain a variety of factors that can influence device dose rate response in bipolar technologies.

Keywords

bipolar transistors; comparators (circuits); electron-hole recombination; elemental semiconductors; hydrogen; radiation effects; semiconductor device models; silicon; silicon compounds; (Si-SiO₂):H; LM193 bipolar dual-voltage comparators; bipolar circuits; device modeling; dose-rate-dependent computer simulations; electron-hole pair recombination; gated lateral pnp bipolar test transistors; hydrogen reactions; Circuits; Computer simulation; Electron traps; Hydrogen; Laboratories; Packaging; Propulsion; Space technology; Spontaneous emission; Thermal stresses; Bipolar oxide; dose rate; enhanced low dose rate sensitivity (ELDRS); hydrogen; interface traps; radiation-induced;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2034154

Filename

5341365