Monolithic circuit for reflection coefficient measurement

Author

Neidert, Robert E.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

1

Issue

8

fYear

1991

Firstpage

195

Lastpage

197

Abstract

A monolithic circuit for measuring the complex reflection coefficient using fixed-probe voltage sampling has been investigated. Ion-implanted GaAs Schottky diodes, with built-in isolation resistance, have been used as voltage samplers along a microstrip transmission line on semi-insulating GaAs. An algorithm for determining reflection coefficient from three detected DC voltages is described. Circuit analysis and modeling, DC voltage calculations, and experimental results for the 5-18 GHz frequency range are presented.<>

Keywords

III-V semiconductors; MMIC; Schottky-barrier diodes; integrated circuit testing; microwave reflectometry; 5 to 18 GHz; DC voltage calculations; GaAs; SHF; Schottky diodes; built-in isolation resistance; circuit analysis; complex reflection coefficient; fixed-probe voltage sampling; ion implanted diodes; microstrip transmission line; modeling; monolithic circuit; reflection coefficient measurement; semi-insulating GaAs; Circuit analysis; Distributed parameter circuits; Electrical resistance measurement; Gallium arsenide; Microstrip; Reflection; Sampling methods; Schottky diodes; Transmission line measurements; Voltage;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.84585

Filename

84585