Finite-element electromagnetic characterization of parasitics in multifinger thermally shunted HBTs

Author

Dhondt, F. ; Barrette, J. ; Haese, N. ; Rolland, P.A. ; Delage, S.L.

Author_Institution

Inst. d´´Electron. et de Microelectron. du Nord, Villeneuve d´´Ascq, France

Volume

8

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

167

Lastpage

169

Abstract

This work describes a methodology to extract parasitic capacitances and evaluate losses in multifinger thermally shunted heterojunction bipolar transistors (HBTs) using three dimensional (3-D) electromagnetic modeling. This method is based on the partitioning of the structure into zones of propagation, which simplifies the analysis of the computed scattering matrices. The approach is validated using on-wafer measurements of open-circuit test structures. This work also addresses the impact of changes in device topology on parasitic coupling capacitance and association efficiency

Keywords

S-matrix theory; capacitance; finite element analysis; heterojunction bipolar transistors; losses; microwave bipolar transistors; semiconductor device models; 3D electromagnetic modeling; association efficiency; device topology; finite-element EM characterization; heterojunction bipolar transistors; losses; multifinger thermally shunted HBTs; parasitic capacitances extraction; parasitic coupling capacitance; parasitics; propagation zones; scattering matrices; three dimensional EM modeling; Circuit simulation; Coupling circuits; DH-HEMTs; Electromagnetic coupling; Electromagnetic modeling; Electromagnetic propagation; Finite element methods; Heterojunction bipolar transistors; Metallization; Parasitic capacitance;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.663522

Filename

663522