Title :
Period doubling route to chaos in SiGe IMPATT diodes
Author :
Suárez, Almudena ; Mediavilla, Angel ; Luy, Johann F.
Author_Institution :
Dept. de Ingenieria de Commun., Cantabria Univ., Santander, Spain
fDate :
4/1/1998 12:00:00 AM
Abstract :
An instantaneous electric model for a SiGe IMPATT diode is calculated here from the physical quantities provided by the foundry. The model is used for the nonlinear simulation of IMPATT-based circuits, which are prone to instability. In this work, a bifurcation analysis is carried out in order to determine their dynamical response, as a function of any suitable parameter. The technique has been applied to the equivalent circuit of the reflection measurement system, from which the IMPATT immittance variation curves are usually determined. The bifurcation analysis allowed the detection of a period doubling route to chaos, in good agreement with the experimental observations
Keywords :
Ge-Si alloys; IMPATT diodes; bifurcation; chaos; dynamic response; equivalent circuits; microwave diodes; negative resistance devices; semiconductor device models; semiconductor materials; stability; IMPATT immittance variation curves; IMPATT-based circuits; SiGe; SiGe IMPATT diodes; bifurcation analysis; dynamical response; equivalent circuit; instability; instantaneous electric model; nonlinear simulation; period doubling route to chaos; reflection measurement system; Bifurcation; Chaos; Equivalent circuits; Frequency conversion; Germanium silicon alloys; P-i-n diodes; Radio frequency; Semiconductor process modeling; Silicon germanium; Voltage;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
