Title :
MOS charge pumps for low-voltage operation
Author :
Wu, Jieh-Tsorng ; Chang, Kuen-Long
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
4/1/1998 12:00:00 AM
Abstract :
New MOS charge pumps utilizing the charge transfer switches (CTSs) to direct charge flow and generate boosted output voltage are described. Using the internal boosted voltage to backward control the CTS of a previous stage yields charge pumps that are suitable for low-voltage operation. Applying dynamic control to the CTSs can eliminate the reverse charge sharing phenomenon and further improve the voltage pumping gain. The limitation imposed by the diode-configured output stage can be mitigated by pumping it with a clock of enhanced voltage amplitude. Using the new circuit techniques, a 1.2-V-to-3.5-V charge pump and a 2-V-to-16-V charge pump are demonstrated
Keywords :
MOS integrated circuits; coupled circuits; voltage multipliers; 1.2 to 3.5 V; 2 to 16 V; MOS charge pumps; boosted output voltage; charge flow; charge transfer switches; clock voltage amplitude; diode-configured output stage; dynamic control; low-voltage operation; voltage pumping gain; Charge pumps; Charge transfer; Circuits; Clocks; Diodes; Nonvolatile memory; Parasitic capacitance; Switches; Threshold voltage; Voltage control;
Journal_Title :
Solid-State Circuits, IEEE Journal of