Impact of a Germanium and Carbon Preamorphization Implant on the Electrical Characteristics of NiSi/Si Contacts With a Presilicide Sulfur Implant

Author

Tong, Yi ; Zhou, Qian ; Chua, Lye Hing ; Thanigaivelan, Thirumal ; Henry, Todd ; Yeo, Yee-Chia

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore

Volume

32

Issue

12

fYear

2011

Firstpage

1734

Lastpage

1736

Abstract

This letter reports the demonstration of preamorphization implant (PAI) using germanium (Ge) and carbon (C) and its combination with presilicide sulfur (S) implant for Schottky barrier height (SBH) tuning of nickel silicide (NiSi)-silicon contacts. Ge and C PAI increases the threshold temperature for agglomeration of a NiSi film, thus enhancing its thermal stability. A presilicide S implant and its segregation at metal/semiconductor interface effectively lowers the effective electron SBH Φ_Bⁿ to 0.18 eV. In addition, the distribution of reverse current in the NiSi/n-type Si contact is improved with the introduction of Ge and C PAI.

Keywords

Schottky barriers; Schottky diodes; ion implantation; thermal stability; Schottky barrier height; carbon preamorphization implant; electrical characteristics; germanium; metal/semiconductor interface; nickel silicide; presilicide sulfur implant; reverse current; silicon contacts; thermal stability; Annealing; Implants; Nickel; Schottky barriers; Silicidation; Silicon; Thermal stability; Carbon; Schottky diodes; germanium; ion implantation; silicides;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2167650

Filename

6042356