Title :
HiPIMS Ion Energy Distribution Measurements in Reactive Mode
Author :
Jouan, Pierre-Yves ; Le Brizoual, Laurent ; Ganciu, Mihaï ; Cardinaud, Christophe ; Tricot, Sylvain ; Djouadi, Mohamed-Abdou
Author_Institution :
Inst. des Mater. Jean Rouxel, Univ. of Nantes, Nantes, France
Abstract :
In this paper, mass spectrometry was used to measure the ion energy distributions of the main species during the sputtering of an aluminum target in a reactive Ar + N2 mixture. Both conventional magnetron sputtering (dc) and high-power impulse magnetron sputtering (HiPIMS) were used. It appears that, in the HiPIMS, N+ and Al+ ions are significantly more energetic (up to 70 eV) than in the dc (<;40 eV). Furthermore, the HiPIMS Al+ signal is two orders of magnitude greater than in the dc, and time-resolved measurements indicate that most of the ion flux hits the substrate during the OFF time of the impulse sequence.
Keywords :
III-V semiconductors; aluminium compounds; mass spectroscopy; semiconductor growth; semiconductor thin films; sputter deposition; time resolved spectra; AlN; HiPIMS ion energy distribution measurements; high-power impulse magnetron sputtering; impulse sequence; ion flux; magnetron sputtering; mass spectrometry; reactive mode; sputtering; time-resolved measurements; Aluminum nitride; Discharges; Plasma measurements; Spectrometry; Sputtering; Substrates; Aluminum nitride; high-power impulse magnetron sputtering (HiPIMS); mass spectrometry;
Journal_Title :
Plasma Science, IEEE Transactions on
DOI :
10.1109/TPS.2010.2073688