Title :
Novel a-Si:H AMOLED Pixel Circuit to Ameliorate OLED Luminance Degradation by External Detection
Author :
Lin, Chih-Lung ; Hung, Chia-Che ; Chang, Wen-Yen ; Chou, Kuan-Wen ; Chuang, Cheng-Yan
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
This letter presents a novel hydrogenated amorphous silicon (a-Si:H) active-matrix organic light-emitting diode (OLED) pixel circuit that compensates for the threshold voltage shift of TFT using an internal compensated structure and reduces luminance decay by external detection method, based on the interdependence between the luminance degradation of OLED and the decrease in current under constant voltage bias stress. Experimental results demonstrate that the luminance of the OLED device with the proposed external detection method is more stable than that with the conventional 2T1C pixel circuit.
Keywords :
organic light emitting diodes; thin film transistors; OLED luminance degradation; TFT; a-Si:H AMOLED pixel circuit; active-matrix organic light-emitting diode; external detection; hydrogenated amorphous silicon; Active matrix organic light emitting diodes; Current measurement; Degradation; Thin film transistors; Threshold voltage; Voltage measurement; Active-matrix organic light-emitting diode (AMOLED); external detection; hydrogenated amorphous silicon (a-Si:H);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2167592
