Title :
High CW power narrow-spectral width (<1.5 Å) 980 nm broad-stripe distributed feedback diode lasers
Author :
Chang, C.H. ; Earles, T. ; Botez, D.
Author_Institution :
Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA
fDate :
5/25/2000 12:00:00 AM
Abstract :
100 μm-stripe, broad-waveguide InGaAs-InGaAsP-GaAs DFB diode lasers (λ=976 nm) have been realised which exhibit narrow spectral widths (full width at half maximum) of 0.5 and 1.3 Å at CW powers of 0.5 and 1 W, respectively. 5/95% facet-coated devices have been realised which have an external differential quantum efficiency of 52% and a wallplug efficiency of 33% at 1 W.
Keywords :
indium compounds; 0.5 W; 1 W; 100 mum; 33 percent; 52 percent; 980 nm; 980 nm broad-stripe distributed feedback diode lasers; CW powers; InGaAs-InGaAsP-GaAs; broad-waveguide InGaAs-InGaAsP-/GaAs DFB diode lasers; differential quantum efficiency; facet-coated devices; high CW power narrow-spectral width; narrow spectral widths; wallplug efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000692
