Title :
Aging behaviour of AlGaN/GaN HFETs with advanced ohmic and Schottky contacts
Author :
Hilsenbeck, J. ; Nebauer, E. ; Wurfl, J. ; Trankle, G. ; Obloh, H.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
fDate :
5/25/2000 12:00:00 AM
Abstract :
The thermal degradation behaviour of AlGaN/GaN HFETs with advanced source/drain and gate metallisations is reported. Using electrical and XRD measurements, it is demonstrated that HFETs with barrier-containing Ti/Al/Ti/Au/WSiN ohmic and the Ir/Au Schottky contacts are stable during aging at 500°C up to 120 h.
Keywords :
junction gate field effect transistors; 500 C; AlGaN-GaN; AlGaN/GaN HFET; Ir-Au; Schottky contact; Ti-Al-Ti-Au-WSiN; X-ray diffraction; diffusion barrier; electrical characteristics; metallisation; ohmic contact; thermal aging;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000702
