Title :
High-quality native-oxide-free ultra-thin oxide grown by in-situ HF-vapour treatment
Author :
Chen, C.L. ; Chao, T.S. ; Lai, C.S. ; Huang, T.Y.
Author_Institution :
Nat. Nano Devices Lab., Hsinchu, Taiwan
fDate :
5/25/2000 12:00:00 AM
Abstract :
A high-quality native-oxide-free ultra-thin gate oxide (2.4-3.2 nm) realised by a clustered vertical furnace with in-situ HF-vapour treatment is presented. The gate oxide integrity was significantly improved by using the in-situ HF-vapour treatment prior to gate oxidation.
Keywords :
oxidation; 2.4 to 3.2 nm; HF; clustered vertical furnace; in situ HF vapour treatment; ultrathin gate oxide growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000693
