Title :
Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers
Author :
Borri, P. ; Langbein, W. ; Hvam, J.M. ; Heinrichsdorff, F. ; Mao, M.-H. ; Bimberg, D.
Author_Institution :
Res. Center COM, Tech. Univ. Denmark, Lyngby, Denmark
fDate :
6/1/2000 12:00:00 AM
Abstract :
The ultrafast dynamics of gain and refractive index in an electrically pumped InAs-InGaAs quantum-dot (QD) optical amplifier are measured at room temperature using differential transmission with femtosecond time resolution. Both absorption and gain regions are investigated. While the absorption bleaching recovery occurs on a picosecond time scale, the gain compression recovers with /spl sim/100-fs time constant, making devices based on such dots promising for high-speed optical communications.
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; optical transmitters; quantum well lasers; semiconductor quantum dots; 100 fs; InAs-InGaAs; InAs-InGaAs quantum-dot amplifiers; absorption bleaching recovery; absorption regions; differential transmission; electrically pumped InAs-InGaAs quantum-dot optical amplifier; femtosecond time resolution; fs time constant; gain compression; gain regions; high-speed optical communications; picosecond time scale; refractive index; room temperature; ultrafast dynamics; ultrafast gain dynamics; Absorption; High speed optical techniques; Optical amplifiers; Optical pumping; Optical refraction; Quantum dots; Refractive index; Stimulated emission; Temperature measurement; Ultrafast optics;
Journal_Title :
Photonics Technology Letters, IEEE
