Comments on "1.88- $\\hbox {m}\\Omega \\cdot \\hbox {cm}^{2}$ 1650-V Normally on 4H-SiC TI-VJFET

Author

Veliadis, Victor

Author_Institution

Northrop Grumman Electron. Syst., Linthicum, MD, USA

Volume

57

Issue

12

fYear

2010

Firstpage

3540

Lastpage

3543

Abstract

The discussion section of paper “1.88-mΩ·cm² 1650-V Normally on 4H-SiC TI-VJFET” which appeared in IEEE Transactions on Electron Devices, vol. 55, no. 8, August 2008, offers a comparative analysis between TI-VJFETs fabricated at USCI/Rutgers and VJFETs (SITs) fabricated at Northrop Grumman Electronic Systems (NGES) for power switching applications. I have a number of issues with this analysis which I wish to highlight. In addition, this paper claims VJFET performance records, which are dubious as they are based on on-resistance values obtained under bipolar operation and on blocking-voltages quoted at unspecified drain-current densities.

Keywords

junction gate field effect transistors; silicon compounds; wide band gap semiconductors; 4H-SiC TI-VJFET; SiC; bipolar operation; drain-current density; on-resistance value; power switching application; silicon carbide; vertical-junction field-effect transistor; Current control; Electric potential; JFETs; Silicon carbide; Junction field effect transistors (JFETs); normally off; normally on; silicon carbide (SiC); vertical channel;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2079172

Filename

5604309

Comments on "1.88- 1650-V Normally on 4H-SiC TI-VJFET

Veliadis, Victor

jour

Comments on "1.88- $\\hbox {m}\\Omega \\cdot \\hbox {cm}^{2}$ 1650-V Normally on 4H-SiC TI-VJFET