Title :
Comparison of effects between large-area-beam ELA and SPC on TFT characteristics
Author :
Noguchi, Takashi ; Tang, Andrew J. ; Tsai, Julie A. ; Reif, Rafael
Author_Institution :
Microsyst. Technol. Lab., MIT, Cambridge, MA, USA
fDate :
9/1/1996 12:00:00 AM
Abstract :
Thin film transistors (TFTs) with channel dimensions between 0.5 μm and 5 μm were fabricated using a low-temperature process of 600°C with single-shot excimer laser annealing (ELA) having a large-area beam of 45×45 mm2. The uniformity in device characteristics across the ELA-treated region was studied. As the channel size decreases, TFT performance and their uniformity for ELA devices were superior compared to those formed with solid phase crystallization (SPC). The superior characteristics by ELA can be explained by the resulting grains with higher crystallinity. TFTs fabricated using ELA having a uniform beam are promising candidates for future LCD peripheral circuits on inexpensive glass and for LSI
Keywords :
MOSFET; excimer lasers; laser beam annealing; thin film transistors; 0.5 to 5 micron; 600 C; LCD peripheral circuits; LSI; Si; TFT characteristics; grains; large-area-beam annealing; low-temperature process; single-shot excimer laser annealing; solid phase crystallization; thin film transistors; Annealing; Crystallization; Laser beams; Optical beams; Optical pulses; Semiconductor films; Silicon; Switches; Temperature distribution; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
