Effect of boron doping on optical and electrical properties of p-type a-Si∶H films for thin film solar cells application

Author

Singh, Chandra Bhal ; Bhattacharya, Surya ; Ahmed, Nova ; Bhargav, P. Balaji

Author_Institution

SSN Res. Centre, Kalavakkam, India

fYear

2014

fDate

16-17 Jan. 2014

Firstpage

38

Lastpage

42

Abstract

We report the effect of boron doping on optical and electrical properties of p-type a-Si:H films. The p-type a-Si:H thin films have been deposited by RF-PECVD system varying the diborane flow rate from 5 sccm to 9 sccm. Enhancement in deposition rate from 30.3 nm/min to 33.6 nm reported with increasing diborane gas flow rate. Change in band gap, refractive index and Urbach energy with varying doping level is studied. An increase in dark conductivity is reported with increasing boron concentration. Solar cells fabricated with 4.63% efficiency.

Keywords

boron; dark conductivity; doping profiles; elemental semiconductors; energy gap; plasma CVD; refractive index; semiconductor doping; semiconductor thin films; silicon; solar cells; RF-PECVD; Si:H,B; Urbach energy; band gap; boron concentration; boron doping; dark conductivity; diborane flow rate; doping level; electrical properties; optical properties; refractive index; thin film solar cells; Indexes; Integrated optics; Optical films; Optical imaging; Optical refraction; Optical variables measurement; Amorphous silicon; Boron doping; Open circuit Voltage; Refractive Index; thin film solar cell;

fLanguage

English

Publisher

ieee

Conference_Titel

Non Conventional Energy (ICONCE), 2014 1st International Conference on

Conference_Location

Kalyani

Print_ISBN

978-1-4799-3339-6

Type

conf

DOI

10.1109/ICONCE.2014.6808678

Filename

6808678