Dark-current analysis of InGaAs-MSM-photodetectors on silicon substrates

Author

Wehmann, Hergo-Heinrich ; Tang, Guang-Ping ; Klockenbrink, Ralf ; Schlachetzki, Andreas

Author_Institution

Inst. fur Halbleitertechnik, Tech. Univ. Braunschweig, Germany

Volume

43

Issue

9

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

1505

Lastpage

1509

Abstract

We fabricated In_0.53Ga_0.47As metal-semiconductor-metal (MSM) photodetectors on lattice-mismatched (001)Si substrates in order to analyze the influence of lattice defects on the III-V semiconductor device properties. The growth procedure and the device-fabrication process are described. The low native Schottky-barrier of InGaAs is enhanced by a p⁺n-InP double layer. Dark-current densities in the operation range measured with the lattice-mismatched devices are comparable to those of lattice-matched devices on InP. Their statistical distribution proves the good reproducibility of the fabrication process. From the temperature and voltage dependence of the dark current, we find that on Si the current in the medium voltage range is obviously influenced by defect-related centres in the bandgap. An empirical model is presented to describe the experimental findings. The dark current is low enough for applications of the MSM detectors in optoelectronic systems

Keywords

III-V semiconductors; Schottky barriers; crystal defects; electric current; energy gap; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; photodetectors; semiconductor device models; semiconductor growth; substrates; vapour phase epitaxial growth; III-V semiconductor device properties; In_0.53Ga_0.47As-InP; MSM photodetectors; Si; Si substrates; bandgap; current densities; dark-current analysis; defect-related centres; device fabrication process; empirical model; growth procedure; lattice defects; lattice-mismatched (001) substrate; native Schottky-barrier; optoelectronic systems; p⁺n-InP double layer; temperature dependence; voltage dependence; Dark current; Density measurement; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Lattices; Photodetectors; Semiconductor devices; Silicon; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.535342

Filename

535342