DocumentCode :
1357191
Title :
A 100-V lateral DMOS transistor with a 0.3-micrometer channel in a 1-micrometer silicon-film-on-insulator-on-silicon
Author :
Apel, U. ; Graf, H.G. ; Harendt, C. ; Höfflinger, B. ; Ifström, T.
Author_Institution :
Inst. fuer Mikroelektronik Stuttgart, Germany
Volume :
38
Issue :
7
fYear :
1991
fDate :
7/1/1991 12:00:00 AM
Firstpage :
1655
Lastpage :
1659
Abstract :
A novel LDMOS transistor structure with breakdown voltages above 100 V has been fabricated in silicon-on-insulator-on-silicon (SOIS). This structure has been fabrication by silicon direct bonding (SDB) and etch-back to a typical film thickness of 1 μm. The silicon carrier layer (handle) serves as a back-gate electrode, which, under proper bias, improves the transistor characteristics significantly. The effective channel length or basewidth is 0.3 μm. Under these conditions, the drift region becomes the current-limiting element. The physics in the drift region in thin silicon films (⩽1 μm) in the transistor on-state is dominated by the injected electrons from the channel. The limitation of the maximum drain current is given by the quasi-saturation effect. Criteria for the further optimization of SOIS LDMOS transistors are presented
Keywords :
MOS integrated circuits; insulated gate field effect transistors; integrated circuit technology; power integrated circuits; power transistors; semiconductor-insulator boundaries; 0.3 micron; 1 micron; 100 V; HVIC; SOIS; Si; back-gate electrode; basewidth; breakdown voltages; current-limiting element; drift region; effective channel length; etch-back; high-voltage IC; lateral DMOS transistor; quasi-saturation effect; silicon direct bonding; Bonding; Dielectrics and electrical insulation; Electrodes; Etching; Fabrication; Logic circuits; Semiconductor films; Silicon on insulator technology; Substrates; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.85163
Filename :
85163
Link To Document :
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