DocumentCode :
1357473
Title :
Vertical-cavity surface-emitting lasers with low-ripple optical pumping windows
Author :
Knopp, Kevin J. ; Christensen, David H. ; Hill, James R.
Author_Institution :
Nat. Inst. of Stand. & Technol., Boulder, CO, USA
Volume :
3
Issue :
2
fYear :
1997
fDate :
4/1/1997 12:00:00 AM
Firstpage :
366
Lastpage :
371
Abstract :
A general technique for numerically optimizing the optical admittances in GaAs QW vertical-cavity laser structures is used to suppress the interference ripple in the typical reflectance/transmittance spectra. This technique is applicable to any vertical-cavity device whose photonic properties at various wavelengths requires modification for specific applications. In this paper, we report the use of this optimization method to enhance the coupling of pump light into 850-nm vertical-cavity surface-emitting lasers (VCSELs). We have designed and fabricated novel lasers which contain a wideband window of low reflectance amidst the typical interference fringe spectrum. The 750-800-nm region for the low-ripple design has an average reflectance of 5%; the peak-to-peak amplitude of the ripple is 0.25%. The sensitivity of these devices to temperature variations and layer-thickness manufacturing variations is also studied. The low-ripple pump window shifts at a rate of 0.036 nm/°C, the peak-to-peak ripple of the reflectance varies less than 2%, and the pump bandwidth remains constant, over temperatures ranging from 0°C to 100°C. The low-ripple structure substantially reduces the temperature and wavelength variation of the pump-field overlap by creating a window of nearly constant reflectance
Keywords :
III-V semiconductors; gallium arsenide; infrared spectra; laser cavity resonators; laser theory; laser transitions; light interference; optical pumping; optical testing; optical windows; optimisation; quantum well lasers; reflectivity; semiconductor device models; surface emitting lasers; 0 to 100 C; 750 to 800 nm; 850 nm; GaAs QW vertical-cavity laser structures; GaAs-AlGaAs; VCSELs; average reflectance; interference ripple suppression; layer-thickness manufacturing variations; low reflectance; low-ripple design; low-ripple optical pumping windows; low-ripple pump window; numerically optimizing; optical admittances; optimization method; peak-to-peak ripple amplitude; photonic properties; pump light coupling; reflectance spectra; sensitivity; temperature variations; transmittance spectra; vertical-cavity device; vertical-cavity surface-emitting lasers; wideband window; Gallium arsenide; Interference suppression; Optical pumping; Optical sensors; Optical surface waves; Pump lasers; Reflectivity; Surface emitting lasers; Temperature sensors; Vertical cavity surface emitting lasers;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/2944.605680
Filename :
605680
Link To Document :
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