Title :
High-performance oxide-confined GaAs VCSELs
Author :
Weigl, Berhard ; Grabherr, Martin ; Jung, Christian ; Jäger, Roland ; Reiner, Gernot ; Michalzik, Rainer ; Sowada, Dirk ; Ebeling, Karl Joachim
Author_Institution :
Dept. of Optoelectron., Ulm Univ., Germany
fDate :
4/1/1997 12:00:00 AM
Abstract :
We present GaAs based selectively oxidized VCSELs with record high 57% wallplug efficiencies emitting in the 820-860-nm wavelength regime. Solid source molecular beam epitaxy with carbon as p-type dopant is used for crystal growth. Multimode devices show continuous-wave (CW) output powers up to 42 mW and stable operation from -80°C up to +185°C. Efficient single-mode output power of some milliwatts is maximized by controlling optical waveguiding that depends on the position of the 30-nm thin oxide aperture. Elliptically shaped current apertures are applied to stabilize output polarization
Keywords :
III-V semiconductors; gallium arsenide; laser modes; laser stability; laser transitions; light polarisation; molecular beam epitaxial growth; oxidation; quantum well lasers; semiconductor growth; waveguide lasers; -80 to 185 C; 42 mW; 57 percent; 820 to 860 nm; CW output powers; GaAs; crystal growth; elliptically shaped current apertures; high-performance oxide-confined GaAs VCSELs; multimode devices; nm wavelength regime; optical waveguiding; output polarization stabilisation; p-type dopant; selectively oxidized; single-mode output power; solid source molecular beam epitaxy; stable operation; thin oxide aperture; wallplug efficiencies; Apertures; Doping profiles; Gallium arsenide; Mirrors; Molecular beam epitaxial growth; Optical transmitters; Power generation; Solids; Temperature; Vertical cavity surface emitting lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.605686
