Title :
Electro-opto-thermal modeling of threshold current dependence on temperature
Author :
Ellis, D.S. ; Xu, Jimmy M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
fDate :
4/1/1997 12:00:00 AM
Abstract :
A self-consistent model of semiconductor quantum-well (QW) lasers is presented and deployed here for the study of threshold current dependence on temperature. The simulated dependencies of threshold current-density on temperature and cavity lengths agree well with experiments published by Evans et al. (1995). Aided with detailed knowledge so obtained of each contributor to the threshold current, attempts are made to gain insights into the well-known Pankove and other newly proposed empirical relations. The relative importance of the various mechanisms are evaluated, and self-heating is shown as an important factor determining the threshold current at high temperature
Keywords :
SPICE; carrier lifetime; current density; high-temperature effects; laser theory; leakage currents; quantum well lasers; semiconductor device models; spontaneous emission; GaAs; InGaAsP; Pankove relations; cavity lengths; electro-opto-thermal modeling; empirical relations; high temperature; self-consistent model; self-heating; semiconductor quantum-well lasers; temperature dependence; threshold current; threshold current-density; Chemical lasers; Indium phosphide; Integrated circuit modeling; Laser modes; Quantum well lasers; Semiconductor lasers; Strain measurement; Temperature dependence; Temperature sensors; Threshold current;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.605716
