Title :
Low-Swing Signaling on Monolithically Integrated Global Graphene Interconnects
Author :
Lee, Kyeong-Jae ; Qazi, Masood ; Kong, Jing ; Chandrakasan, Anantha P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
In this paper, we characterize the performance of monolithically integrated graphene interconnects on a prototype 0.35-μm CMOS chip. The test chip implements an array of transmitter/receivers to analyze the end-to-end data communication on graphene wires. Large-area graphene sheets are first grown by chemical vapor deposition, which are then subsequently processed into narrow wires up to 1 mm in length. A low-swing signaling technique is applied, which results in a transmitter energy of 0.3-0.7 pJ/b·mm-1 and a total energy of 2.4-5.2 pJ/b·mm-1. Bit error rates below 2 × 10-10 are measured using a 231 - 1 pseudorandom binary sequence. Minimum voltage swings of 100 mV at 1.5-V supply and 500 mV at 3.3-V supply have also been demonstrated. At present, the graphene wire is largely limited by its growth quality and high sheet resistance.
Keywords :
CMOS integrated circuits; chemical vapour deposition; error statistics; graphene; random sequences; CMOS chip; bit error rates; chemical vapor deposition; low-swing signaling; monolithically integrated global graphene interconnects; pseudorandom binary sequence; voltage 1.5 V; voltage 100 mV; voltage 3.3 V; voltage 500 mV; CMOS integrated circuits; Delay; Integrated circuit interconnections; Monolithic integrated circuits; Receivers; Transmitters; Wires; complementary metal–oxide–semiconductor (CMOS) integrated circuits; graphene; interconnects; low-swing signaling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2083667