DocumentCode
1359664
Title
40 Gbit/s monolithic digital OEIC composed of unitravelling-carrier photodiode and InP HEMTs
Author
Shimizu, N. ; Murata, K. ; Hirano, A. ; Miyamoto, Y. ; Kitabayashi, H. ; Umeda, Y. ; Akeyoshi, T. ; Furuta, T. ; Watanabe, N.
Author_Institution
NTT Network Innovation Labs., Kanagawa, Japan
Volume
36
Issue
14
fYear
2000
fDate
7/6/2000 12:00:00 AM
Firstpage
1220
Lastpage
1221
Abstract
An optoelectronic integrated circuit (OEIC) receiver with a measured sensitivity of -27.5 dBm for a 40 Gbit/s return-to-zero optical signal is described. The results indicate the potential of current in high-speed optical communication systems
Keywords
HEMT integrated circuits; III-V semiconductors; indium compounds; integrated optoelectronics; optical receivers; photodiodes; 40 Gbit/s; Gbit/s monolithic digital OEIC; Gbit/s return-to-zero optical signal; InP HEMTs; OEIC receiver; high-speed optical communication systems; measured sensitivity; optoelectronic integrated circuit receiver; unitravelling-carrier photodiode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000859
Filename
852253
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