Title :
High voltage SiC diodes with small recovery time
Author :
Levinshtein, M.E. ; Mnatsakanov, T.T. ; Ivanov, P.A. ; Palmour, J.W. ; Rumyantsev, S.L. ; Singh, R. ; Yurkov, S.N.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
7/6/2000 12:00:00 AM
Abstract :
4H-SiC diodes with 6 kV blocking capability. Low forward voltage drop (4.2 V at 100 A/cm2, 5.8 V at 500 A/cm2), and very small recovery time (⩽7 ns) have been demonstrated for the first time. Experimental results can be explained by the combination of high lifetime across the major part of the base and the presence near the metallurgical boundary of the p+n junction of a thin layer with a very small carrier lifetime
Keywords :
carrier lifetime; power semiconductor diodes; semiconductor device measurement; silicon compounds; wide band gap semiconductors; 4.2 V; 4H-SiC diodes; 5.8 V; 6 kV; 7 ns; SiC; blocking capability; high lifetime; high voltage SiC diodes; low forward voltage drop; metallurgical boundary; p+n junction; small carrier lifetime; small recovery time;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000849
