DocumentCode :
1360826
Title :
Optical Power Transmission Through Adhesive and Bonding Layers
Author :
Subashiev, Arsen V. ; Luryi, Serge
Author_Institution :
Dept. of Electr. & Comput. Eng., State Univ. of New York at Stony Brook, Stony Brook, NY, USA
Volume :
27
Issue :
22
fYear :
2009
Firstpage :
5192
Lastpage :
5201
Abstract :
In this paper, we analyze the optical power transmission in structures that include a low-index intermediate layer and sources with a wide angular distribution. Special attention is paid to the angular average of the transmission coefficient, which can be cast in a universal form for two practically relevant classes of source layers. Due to the so-called frustrated total internal reflection, the structure transparency is highly sensitive to the intermediate layer thickness and index contrast. We show that the transmission coefficient for isotropic radiation may remain low even for optically thin low-index intermediate layers, so that the usual comparison between the optical thickness and the wavelength is no longer a reliable criterion. Calculations are presented for exemplary structures, such as a semiconductor scintillator bonded to a photodiode. The angular dependence of the transmission coefficient is shown to satisfy a simple and universal sum rule.
Keywords :
optoelectronic devices; photodiodes; power transmission; semiconductor counters; semiconductor devices; adhesive layers; bonding layers; frustrated total internal reflection; index contrast; layer thickness; optical power transmission; optical thickness; photodiode; semiconductor scintillator; structure transparency; transmission coefficient; Emission efficiency; light emitting diodes; luminescence; semiconductor scintillators;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.2009.2031309
Filename :
5229165
Link To Document :
بازگشت