Title :
The features of cold boron implantation in silicon
Author :
Vyatkin, A.F. ; Agafonov, Yu.A. ; Zinenko, V.I. ; Saraikin, V.V.
Author_Institution :
Inst. of Microelectron. Technol., Chernogolovka, Russia
fDate :
June 26 2014-July 4 2014
Abstract :
In recent years silicon doping aimed at ultrashallow p-n junction formation is very often performed at low temperatures. This work shows that films condensed in the solid phase from gas molecules of the residual atmosphere in the implantation chamber can appear on the silicon surface at low temperature (83K) implantation of boron ions. These condensed films can bring about a decrease in the projected range of the boron ions. The observed effect was used in this work to produce ultrashallow layers of boron atoms in silicon wafers from the BF3 film condensed in the solid phase on the silicon surface by the recoil implantation technique.
Keywords :
boron; condensation; elemental semiconductors; ion implantation; semiconductor doping; semiconductor growth; semiconductor thin films; silicon; BF3 film; Si:B; boron atoms; boron ions; cold boron implantation; condensed films; gas molecules; low temperature implantation; recoil implantation technique; residual atmosphere; silicon doping; silicon surface; silicon wafers; ultrashallow layers; ultrashallow p-n junction formation; Boron; Films; Ion implantation; Ions; Silicon; Solids; Temperature distribution; boron; cold implantation; condensed films; recoil implantation;
Conference_Titel :
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location :
Portland, OR
DOI :
10.1109/IIT.2014.6939960