The influence of dose rate on ultra shallow surface dopant profile

Author

Shao-Yu Hu ; Ger-Pin Lin ; Ching-I Li ; Hong Lu ; Zhimin Wan

Author_Institution

Adv. Ion Beam Technol. Inc., Tainan, Taiwan

fYear

2014

fDate

June 26 2014-July 4 2014

Firstpage

1

Lastpage

4

Abstract

Dose rates were widely studied in ion implanter history due to the influence on semiconductor device performance. Several major parameters can be adjusted by dose rate, including implant damage, doping profile distribution, and doping activation. As devices shrink, ultra shallow surface doping becomes more significant on device performance. In this study, a special phenomenon of Boron distribution was investigated. Some parameters for dose rate tuning were also used to adjust the surface profile, which were potentially knobs for tuning device performance improvement.

Keywords

boron; doping profiles; ion implantation; semiconductor devices; semiconductor doping; B; boron distribution; doping activation; doping profile distribution; dose rate tuning; implant damage; ion implanter history; semiconductor device performance; surface profile; ultra shallow surface dopant profile; Doping profiles; Implants; Junctions; Performance evaluation; Standards; Surface treatment; Dose rate; SIMS; activation; ion implant;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology (IIT), 2014 20th International Conference on

Conference_Location

Portland, OR

Type

conf

DOI

10.1109/IIT.2014.6939964

Filename

6939964