Influence of implantation temperature on the formation of hydrogen-related defects in InP

Author

Luce, F.P. ; Reboh, S. ; Vilain, E. ; Madeira, F. ; Barnes, Jean-Paul ; Rochat, N. ; Salvetat, T. ; Tauzin, A. ; Milesi, F. ; Mazen, F. ; Deguet, C.

Author_Institution

LETI, CEA, Grenoble, France

fYear

2014

fDate

June 26 2014-July 4 2014

Firstpage

1

Lastpage

4

Abstract

The evolution of hydrogen-related defects introduced in the InP lattice due to the implantation and subsequent annealing is investigated as a function of the implantation temperature, that was varied from -15 °C to 230 °C. Implanted and annealed samples were analyzed by optical microscopy, SIMS and FTIR. The obtained results are discussed in terms of the formation of V_InH_x complexes that seems to be efficient H trapping centers, probably being the precursors of the fracture process in InP.

Keywords

Fourier transform spectra; III-V semiconductors; annealing; fracture; indium compounds; infrared spectra; ion implantation; optical microscopy; secondary ion mass spectra; semiconductor doping; vacancies (crystal); FTIR; InP lattice; InP:H; SIMS; annealing; efficient H trapping centers; fracture process precursors; hydrogen-related defect formation; implantation temperature; optical microscopy; temperature -15 degC to 230 degC; Annealing; Films; Hydrogen; Indium phosphide; Substrates; Surface treatment; Temperature measurement; InP; damage formation; ion implantation; layer transfer;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology (IIT), 2014 20th International Conference on

Conference_Location

Portland, OR

Type

conf

DOI

10.1109/IIT.2014.6939972

Filename

6939972