Fabrication of high-performance carbon nanotube field-effect transistors (CNTFETs) and CNTFET-based electronic circuits with semiconductors as the source/drain contact materials

We report fabrication of single-walled carbon nanotube field-effect transistors and inverters using semiconductors as the source/drain contact material. The electrical properties were measured from the fabricated devices. The fabricated carbon nanotube field-effect transistor has high on/off drain-source current ratios and excellent saturation of drain-source current, and the inverter has excellent transfer characteristics.