Enhanced Light Extraction in Wafer-Bonded AlGaInP-Based Light-Emitting Diodes via Micro- and Nanoscale Surface Textured

Author

Lee, Yea-Chen ; Kuo, Hao-Chung ; Cheng, Bo-Siao ; Lee, Chia-En ; Chiu, Ching-Hua ; Lu, Tien-Chang ; Wang, Shing-Chung ; Liao, Tien-Fu ; Chang, Chih-Sung

Author_Institution

Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

30

Issue

10

fYear

2009

Firstpage

1054

Lastpage

1056

Abstract

AlGaInP-based metal-bonding light-emitting diodes (LEDs) with micro- and nanoscale textured surface were investigated. The device surface with microbowls and nanorods were formed by a chemical wet-etching and dry-etching technique for enhancing light-extraction purpose. The luminous intensity could be enhanced 65.8% under 20-mA current injection as compared with the plane surface LEDs. The maximum wall-plug efficiency was achieved 14.1% at 7.5-mA operation.

Keywords

III-V semiconductors; aluminium compounds; etching; gallium compounds; indium compounds; light emitting diodes; surface texture; wafer bonding; AlGaInP; chemical wet-etching; current 20 mA; current 7.5 mA; current injection; dry-etching technique; efficiency 14.1 percent; efficiency 65.8 percent; light extraction; light-emitting diodes; light-extraction enhancement; luminous intensity; microbowl; microscale textured surface; nanorod; nanoscale textured surface; wafer bonding; wall-plug efficiency; AlGaInP light-emitting diodes (LEDs); light-extraction efficiency; metal bonding; silica nanoparticles; spin coating; surface textured;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2028445

Filename

5229276