Efficient Monte Carlo simulation of ion implantation into 3D FinFET structure

Author

Kubotera, Hiroyuki ; Kayama, Yasuyuki ; Nagura, Sachio ; Usami, Yasutsugu ; Schmidt, A. ; Kwon, Uihui ; Keun-Ho Lee ; Park, Yu-Seop

Author_Institution

Semicond. R&D Center, Samsung Electron., Hwasung, South Korea

fYear

2014

fDate

June 26 2014-July 4 2014

Firstpage

1

Lastpage

4

Abstract

Precise simulation of ion implantation is a crucial base point of Front End Process (FEP) TCAD. To meet both simulation accuracy target and achieve short turnaround time (TAT), an improved statistical enhancement method has been implemented in Monte Carlo ion implantation simulator. The approach used for statistical enhancement allowed lower lateral doping profile noise comparing to conventional method while using just a fraction of simulation time. The results led to significant TAT reduction for advanced Logic and Memory FEP simulations.

Keywords

MOSFET; Monte Carlo methods; doping profiles; ion implantation; technology CAD (electronics); 3D FinFET structure; FEP TCAD; Monte Carlo ion implantation simulator; Monte Carlo simulation; TAT reduction; advanced logic FEP simulation; advanced memory FEP simulation; front end process TCAD; improved statistical enhancement method; ion implantation; lateral doping profile noise; simulation accuracy target; simulation time fraction; turnaround time; FinFETs; Integrated circuit modeling; Ion implantation; Noise; Semiconductor process modeling; Three-dimensional displays; Trajectory; FinFET; Ion Implantation; Monte Carlo Simulation; Statistical Enhancement; Trajectory Splitting Method;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology (IIT), 2014 20th International Conference on

Conference_Location

Portland, OR

Type

conf

DOI

10.1109/IIT.2014.6939999

Filename

6939999