A Solution Toward the OFF-State Degradation in Drain-Extended MOS Device

Author

Shrivastava, Mayank ; Jain, Ruchil ; Baghini, Maryam Shojaei ; Gossner, Harald ; Rao, V. Ramgopal

Author_Institution

Infineon Technol., East Fishkill, NY, USA

Volume

57

Issue

12

fYear

2010

Firstpage

3536

Lastpage

3539

Abstract

We investigated the surface band-to-band tunnelling (BTBT) current under the off-state condition in drain-extended MOS (DeMOS) devices. We found significant gate-induced drain leakage current due to surface BTBT, which was also reported earlier as the dominant cause of early time-dependent dielectric breakdown and device failure. Furthermore, a layout solution for the existing DeMOS device is proposed in order to mitigate the surface BTBT current and the associated gate oxide reliability issues, without sacrificing the mixed-signal performance of the device.

Keywords

MIS devices; electric breakdown; mixed analogue-digital integrated circuits; tunnelling; DeMOS device; band-to-band tunnelling; device failure; dielectric breakdown; drain-extended MOS device; gate oxide reliability; gate-induced drain leakage current; mixed-signal performance; off-state degradation; surface BTBT current; Degradation; Dielectric breakdown; Electrostatic discharge; MOS devices; Reliability; Semiconductor device modeling; Tunneling; Band-to-band tunnelling (BTBT); drain extended; drain-extended MOS (DeMOS); input/output; time-dependent dielectric breakdown (TDDB);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2082549

Filename

5610723