Multiple-route and multiple-state current-voltage characteristics of an InP/AlInGaAs switch for multiple-valued logic applications

Author

Liu, Wen-Chau ; Wang, Wei-Chou ; Pan, Hsi-jen ; Chen, Jing-Yuh ; Cheng, Shiou-Ying ; Lin, Kun-Wei ; Yu, Kuo-Hui ; Thei, Kong-Beng ; Cheng, Chin-Chuan

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

47

Issue

8

fYear

2000

fDate

8/1/2000 12:00:00 AM

Firstpage

1553

Lastpage

1559

Abstract

A novel multiple-state switching device based on an InP/AlInGaAs heterojunction bipolar transistor (HBT) structure has been successfully fabricated and demonstrated. The common-emitter current gain up to 25 is obtained under the forward operation mode. However, the anomalous multiple-negative-differential-resistance (MNDR) phenomena controlled either by electrical or optical input signals are observed under the inverted operation mode. The studied device exhibits a single-route S-shaped NDR behavior in the dark and a distinct significant S-shaped MNDR phenomena by introducing an incident light source at room temperature. Moreover, the anomalous multiple-route and multiple-step current-voltage (I-V) characteristics are also observed at 77 K. The switching behaviors are attributed to the avalanche multiplication, barrier lowering effect and potential redistribution process. Experimental results show that the studied device provides a good potentiality for multiple-valued logic and optoelectronic switching system applications

Keywords

III-V semiconductors; aluminium compounds; avalanche breakdown; bipolar logic circuits; bipolar transistor switches; doping profiles; gallium arsenide; heterojunction bipolar transistors; indium compounds; multivalued logic circuits; negative resistance circuits; InP-AlInGaAs; anomalous multiple-route; barrier lowering effect; common-emitter current gain; forward operation mode; heterojunction bipolar transistor; incident light source; inverted operation mode; multiple-negative-differential-resistance; multiple-route current-voltage characteristics; multiple-state current-voltage characteristics; multiple-step current-voltage; multiple-valued logic applications; optoelectronic switching system; potential redistribution process; single-route S-shaped NDR behavior; switching behaviors; Current-voltage characteristics; Heterojunction bipolar transistors; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Logic devices; Optical control; Optical devices; Substrates; Switches;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.853030

Filename

853030