Total ionizing dose effects in high breakdown voltage SOI devices

Author

Zhongjian Wang ; Xinhong Cheng ; Chao Xia ; Dawei Xu ; Lingyan Shen ; Duo Cao ; Li Zheng ; Qian Wang ; Yu Yuehui

Author_Institution

State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Micro-Syst. & Inf. Technol., Shanghai, China

fYear

2014

fDate

June 26 2014-July 4 2014

Firstpage

1

Lastpage

4

Abstract

In this paper, 600V LDMOS and LIGBT on thin SOI with improved field oxide (FOX) were fabricated. The dependence of the off-state breakdown voltage on the implant dose in the drift region and the on-state characteristics were measured. Total ionizing dose (TID) effects on LDMOS and LIGBT were studied experimentally. The threshold voltage shift and leakage current induced by ⁶⁰Co gamma irradiation under different dose and bias conditions were compared.

Keywords

gamma-ray effects; insulated gate bipolar transistors; leakage currents; power MOSFET; radiation hardening (electronics); semiconductor device breakdown; silicon-on-insulator; LDMOS; LIGBT; drift region; gamma irradiation; high breakdown voltage SOI devices; lateral insulated insulated gate bipolar transistors; leakage current; threshold voltage shift; total ionizing dose effects; voltage 600 V; Implants; Leakage currents; Logic gates; Radiation effects; Silicon; Silicon-on-insulator; Threshold voltage; LDMOS; LIGBT; SOI; Total ionizing dose (TID);

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology (IIT), 2014 20th International Conference on

Conference_Location

Portland, OR

Type

conf

DOI

10.1109/IIT.2014.6940005

Filename

6940005