Atomic layer deposition of dopants for recoil implantation in finFET sidewalls

Author

Seidel, Thomas E. ; Halls, Mathew D. ; Goldberg, Adina ; Elam, Jeffrey W. ; Mane, Anil ; Current, Michael I.

Author_Institution

Seitek50, Palm Coast, FL, USA

fYear

2014

fDate

June 26 2014-July 4 2014

Firstpage

1

Lastpage

4

Abstract

The doping of finFET sidewalls is studied using glancing angle, energetic ion beam recoil mixing of dopant-rich layers made by atomic layer deposited (ALD) films on vertical Si(100) surfaces. Density Function Theory (DTF) calculations show that surface conditions for initiating ALD with BF₃ and PF₃ dopants favor hydroxyl-Si surface termination. Monte Carlo calculations of the recoil-delivered-B highlights the process control advantages of grazing angle incidence energetic ion beams, as long as the deposited dopant layers are well controlled in thickness and composition, as one expects from ALD methods.

Keywords

MOSFET; Monte Carlo methods; atomic layer deposition; boron compounds; density functional theory; ion beam mixing; ion implantation; phosphorus compounds; semiconductor doping; semiconductor thin films; ALD films; BF₃; DTF calculations; FinFET sidewalls; Monte Carlo calculations; PF₃; Si; atomic layer deposition; density function theory; dopant-rich layers; energetic ion beam recoil mixing; hydroxyl-silicon surface termination; of grazing angle incidence energetic ion beams; process control; recoil implantation; Atomic layer deposition; Doping; Films; FinFETs; Silicon; Substrates; Surface treatment; atomic layer deposition; finFET sidewall doping; ion recoil mixing;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology (IIT), 2014 20th International Conference on

Conference_Location

Portland, OR

Type

conf

DOI

10.1109/IIT.2014.6940009

Filename

6940009