A dual body SOI structure for mixed analog-digital mode circuits

Author

Lee, Hyeokjae ; Lee, Jong-Ho ; Park, Young June ; Min, Hong Shick

Author_Institution

Sch. of Electr. Eng. & ISRC, Seoul Nat. Univ., South Korea

Volume

47

Issue

8

fYear

2000

fDate

8/1/2000 12:00:00 AM

Firstpage

1617

Lastpage

1623

Abstract

A new silicon-on-insulator (SOI) structure for mixed analog-digital applications is proposed where analog and digital MOSFET´s are independently optimized. Two types of field oxide are introduced so that the body bias of analog devices can be effectively controlled whereas the channel region for digital devices is fully depleted. From measurements of the body related device characteristics such as the output resistance, the variation of threshold voltage and transconductance, 1/f noise, body resistance, and the self-heating effect, it is shown that the proposed structure is promising for SOI technology in mixed analog-digital mode circuit applications

Keywords

1/f noise; CMOS integrated circuits; MOSFET; integrated circuit noise; integrated circuit technology; mixed analogue-digital integrated circuits; silicon-on-insulator; 1/f noise; MOSFETs; Si; body bias; body related device characteristics; body resistance; dual body SOI structure; field oxide; fully depleted channel region; mixed analog-digital mode circuits; output resistance; self-heating effect; threshold voltage variation; transconductance variation; Analog-digital conversion; Body regions; Circuit noise; Electrical resistance measurement; Immune system; Noise measurement; Semiconductor films; Silicon on insulator technology; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.853039

Filename

853039