Title :
A new trench base-shielded bipolar transistor
Author :
Chen, Qufei ; You, Budong ; Huang, Alex Q. ; Sin, Johnny K O
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
fDate :
8/1/2000 12:00:00 AM
Abstract :
In this paper, a new power bipolar transistor structure called the trench base-shielded bipolar transistor (TBSBT) Is proposed and experimentally demonstrated. This structure incorporates deep p+ poly-Si trenches into the base of a conventional bipolar transistor. With the base shielded effectively by the p+ trenches, the base of the TBSBT can be made very narrow to achieve high current gain hFE and high cut-off frequency fT without compromising on the breakdown voltage. Experimental results show that the on-state anti switching characteristics of the TBSBT are significantly better than those of the existing power bipolar transistors
Keywords :
etching; power bipolar transistors; semiconductor device breakdown; silicon; Si; breakdown voltage; deep p+ poly-Si trenches; high current gain; high cutoff frequency; onstate anti switching characteristics; polysilicon trenches; power bipolar transistors; trench base-shielded bipolar transistor; Bipolar transistors; Cutoff frequency; Fabrication; Insulated gate bipolar transistors; MOSFET circuits; Power electronics; Power semiconductor switches; Power transistors; Silicon compounds; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
