Title :
A transient SPICE model for digitally modulated RF characteristics of ion-implanted GaAs MESFET´s
Author :
Shirokov, Mikhail S. ; Leoni, Robert E., III ; Bao, Jianwen ; Hwang, James C M
Author_Institution :
Lehigh Univ., Bethlehem, PA, USA
fDate :
8/1/2000 12:00:00 AM
Abstract :
A transient SPICE model, which was previously developed for epitaxial GaAs MESFET´s, was modified for ion-implanted GaAs MESFET´s. The model accounts for both trapping and detrapping effects hence can simulate both low-frequency dispersion and gate-lag characteristics. The model was experimentally verified in terms of pulsed current-voltage (I-V) characteristics and digitally modulated RF carrier waveforms
Keywords :
III-V semiconductors; SPICE; Schottky gate field effect transistors; gallium arsenide; ion implantation; semiconductor device models; transient analysis; transient response; GaAs; detrapping effects; digitally modulated RF carrier waveforms; digitally modulated RF characteristics; gate-lag characteristics; ion-implanted GaAs MESFET; low-frequency dispersion; pulsed I-V characteristic; pulsed current-voltage characteristics; transient SPICE model; trapping effects; Current measurement; Digital modulation; Gallium arsenide; MESFETs; Pulse measurements; Radio frequency; SPICE; Semiconductor process modeling; Substrates; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
