Title :
Forward gated-diode measurement of filled traps in high-field stressed thin oxides
Author :
Chen, Ming-Jer ; Kang, Ting-Kuo ; Huang, Huan-Tsung ; Liu, Chuan-Hsi ; Chang, Yih J. ; Fu, Kuan-Yu
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
8/1/2000 12:00:00 AM
Abstract :
The forward gated-diode monitoring technique can find its potential applications in assessing the filled traps in MOSFET thin oxides, which are subjected to high-field stressing and then followed by a hot-electrons filling scheme. Our measurement of the gate voltage shift associated with the forward current peak produces a power law relation between the filled trap density and the electron stress fluence, indeed in close agreement with that obtained by MOSFET threshold voltage shift
Keywords :
MOSFET; dielectric thin films; electron traps; high field effects; hot carriers; leakage currents; semiconductor device breakdown; semiconductor device measurement; tunnelling; MOSFET thin oxides; electron stress fluence; filled trap density; filled traps; forward current peak; forward gated-diode measurement; forward gated-diode monitoring technique; gate voltage shift; high-field stressed thin oxides; hot-electrons filling scheme; power law relation; Current measurement; Density measurement; Electron traps; Filling; MOSFET circuits; Monitoring; Power MOSFET; Power measurement; Stress measurement; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
